DEVICE PERFORMANCE OF POLY-Si THIN-FILM TRANSISTORS FABRICATED ON YSZ CRYSTALLIZATION-INDUCTION LAYER VIA A TWO-STEP IRRADIATION METHOD USING PULSED LASER
Corresponding Author(s) : Mai Thi Kieu Lien
UED Journal of Social Sciences, Humanities and Education,
Vol. 7 No. 5 (2017): UED JOURNAL OF SOCIAL SCIENCES, HUMANITIES AND EDUCATION
In this study, we fabricated and investigated device performance of poly-Si thin-film transistors (TFTs) via a two-step pulsed-laser annealing (PLA) method on two kinds of substrates namely glass and YSZ*/glass. It was found that TFTs on YSZ/glass exhibited much better performance and uniformity among devices, e.g., they showed an average mobility of ~80 cm2/Vs and standard deviation of ~18 cm2/Vs, respectively, compared with ~40 cm2/Vs and ~28 cm2/Vs of TFTs on glass substrates, respectively. This result can be attributed to the better crystalline quality of the Si film on the YSZ/glass and the uniform distribution of grains as well as crystalline defects, which demonstrates the effectiveness of the crystallization-induction effect of the YSZ layer. (*YSZ: Yttria-Stabilized Zirconia)
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