EFFECT OF METAL THIN FILMS ON CRYSTALLIZATION QUALITY OF Si THIN FILMS
Corresponding Author(s) : Mai Thi Kieu Lien
UED Journal of Social Sciences, Humanities and Education,
Vol. 7 No. 3 (2017): UED JOURNAL OF SOCIAL SCIENCES, HUMANITIES AND EDUCATION
On the basis of the results obtained from the Si/glass and Si/YSZ*/glass, we investigated the quality of the solid-phase Si/YSZ/metal/glass structure crystallized by both the one-step method and the two-step method using pulse laser clusters. It was found that given the same heating time and a lower total irradiation energy density, the two-step method resulted in a higher crystallization degree and better crystallization quality compared to the one-step method. This proved the effectiveness of the two-step method in improving the crystallization quality of Si films on YSZ/metal/glass. Moreover, the metal layer has a small heating effect on accelerating the crystallization of the Si film. Heating conditions were optimized for the fabrication of bottom-gate poly-Si thin-film transistors (* YSZ: Yttria--Stabilized Zirconia).
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