LOW-TEMPERATURE CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILMS ON BOTTOM GATE ELECTRODES BY USING YSZ CRYSTALLIZATION-INDUCTION LAYER AND SOLID-PHASE CRYSTALLIZATION METHODS
Corresponding Author(s) : Mai Thi Kieu Lien
UED Journal of Social Sciences, Humanities and Education,
Vol. 6 No. 3 (2016): UED JOURNAL OF SOCIAL SCIENCES, HUMANITIES AND EDUCATION
We have successfully crystallized amorphous silicon (a-Si) thin films at a low temperature by using the crystallization-induction layer of yttria stabilized zirconia (YSZ) in combination with solid-phase crystallization (SPC) methods. The obtained polycrystalline silicon (poly-Si) thin films via these methods can be implemented in TFTs fabrication. The capability of using the YSZ layer as an insulation gate was also investigated by means of electrical property measurements like the dependence of capacity on voltage (C-V), and the dependence of eclectric current power on voltage (I-V). The C-V measurement showed that interface properties between the YSZ layer and the crystallized Si film were relatively good. Moreover, hysteresis loops were hardly observed. The I-V measurement showed a relatively low leakage current. This means that the YSZ layer can operate reliably as a comparatively good insulator.
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 E. Machida et al. (2012), Crystallization to Polycrystalline Silicon Films by Underwater Laser Annealing, The proceeding of AM-FPD’12 Conference, tr.111-114.
 T. Sameshima, S. Usui, and M. Sekiya (1986), XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFT’s, IEEE Electron Device Letters, 7, 5, tr.276-278.
 S. Uchikoga and N. Ibaraki (2001), Low temperature poly-Si TFT-LCD by excimer laser anneal, Thin Solid Films, 383, tr.19-24.
 Y. W. Choi, J. N. Lee, T. W. Jang, and B. T. Ahn (1999), Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing, IEEE Electron Device Letters, 20, tr.2-4.
 K. Pangal, J. C. Sturm, S. Wagner, and T. H. Buyuklimanli (1999), Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films, J. Appl. Phys., 85, tr.1900.
 R. Kakkad et al. (1989), Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon, J. Appl. Phys., 65, 5, tr.2069-2072.
 G. Liu and S. J. Fonash (1989), Selective area crystallization of amorphous silicon films by low temperature rapid thermal annealing, Appl. Phys. Lett., 55, 7, tr.660-662.
 R. C. Cammarata, C. V. Thompson, C. Hayzelden, and K. N. Tu (1990), Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films, Journal of Material Research, 5, tr.2133-2138.
 S. Y. Yoon et al. (1997), Low temperature metal induced crystallization of amorphous silicon using a Ni solution, J. Appl. Phys., 82, 11, tr.5865-5867.
 G. Radnoczi et al. (1991), Al induced crystallization of a-Si, J. Appl. Phys., 69, 9, tr.6394-6399.
 N. H. Nickel (2003), Laser crystallization of silicon, Elsevier, vol. 75.
 R. A. Lemons et al. (1982), Laser crystallization of Si films on glass, Appl. Phys. Lett., 40, tr.469.
 T. E. Dyer et al. (1993), Polysilicon produced by excimer (ArF) laser crystallisation and low-temperature (600°C) furnace crystallisation of hydrogenated amorphous silicon (a-Si:H), J. Non-Cryst. Solids, 164-166, tr.1001-1004.
 T. Sameshima, M. Hara, and S. Usui (1989), Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H, Jpn. J. Appl. Phys., 28, 12, tr.L2131-L2133.
 J. C. C. Fan and H. J. Zeiger (1975), Crystallization of amorphous silicon films by Nd:YAG laser heating, Appl. Phys. Lett. 27, 4, tr.224-226.
 S. Horita et al. (2006), Fabrication of Crystallized Si Film Deposited on a Polycrystalline YSZ Film/Glass Substrate at 500°C, MRS, 910, tr.557.
 S. Horita and S. Hana (2010), Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers, Jpn. J. Appl. Phys., 49, 105801, tr.1-11.
 S. Hana, T. Akahori, and S. Horita (2009), The Proceeding of IDW’9, FMC1-1, tr.271.
 S. Horita and T. Akahori (2010), Abst. (7th Annual Meet.); Thin Film Materials & Devices Meeting, 6P12 [in Japanese].
 S. Hana, K. Nishioka, and S. Horita (2009), Enhancement of the crystalline quality of reactively sputtered yttria-stabilized zirconia by oxidation of the metallic target surface, Thin Solid Films, 517, tr.5830-5836.
 S. Ray, S. Mukhopadhyay, T. Jana, and R. Carius (2002), Transition from amorphous to microcrystalline Si:H: effects of substrate temperature and hydrogen dilution, J. Non-Cryst. Solids, 299–302, tr.761-766